ghz technology inc. reserves the right to make changes without further notice. ghz recommends that before the product(s) described herein are written into specifications, or used in critical applications, that the performance characteristics be verified by contacting the factory. ghz technology inc. 3000 oakmead village drive, santa clara, ca 95051-0808 tel. 408 / 986-8031 fax 408 / 986-8120 1819AB35 35 watts, 25 volts, class ab personal 1808 - 1880 mhz general description the 1819AB35 is a common emitter transistor capable of providing 35 watts of class ab, rf output power over the band 1808-1880 mhz. this transistor is specifically designed for personal communications base station amplifier applications. it includes input prematching and utilizes gold metalization and high value emitter ballasting to provide high reliability and supreme ruggedness. . case outline 55ar, style 2 common emitter absolute maximum ratings maximum power dissipation @ 25 c 120 watts o maximum voltage and current bvces collector to emitter voltage 60 volts lvceo collector to emitter voltage 27 volts bvebo emitter to base voltage 3.5 volts ic collector current 14.0 amps maximum temperatures storage temperature - 65 to + 150 c o operating junction temperature + 200 c o electrical characteristics @ 25 c o symbol characteristics test conditions min typ max units pout pin pg h c vswr 1 power out power input power gain collector efficiency load mismatch tolerance f =1880 mhz vce = 25 volts icq = 250 mamps as above 35 8.0 8.5 43 6.0 3:1 watt watt db % bvces lvceo bvebo ices h fe cob q jc collector to emitter breakdown collector to emitter breakdown emitter to base breakdown collector leakage current dc - current gain output capacitance thermal resistance ic = 50 ma ic = 50 ma ie = 10 ma vce = 27 volts vce = 5 v, ic = 0.7 a f =1 mhz, vcb = 28 v tc = 25 c o 60 27 3.5 20 36 10 100 1.6 volts volts volts ma pf c/w o issue march, 1996
typical performance 1819AB35 august 1996
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